View IRF2204LPBF_7717078.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 170 i d @ t c = 100c continuous drain current, v gs @ 10v 120 a i dm pulsed drain current 850 p d @t c = 25c power dissipation 200 w linear derating factor 1.3 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 460 mj i ar avalanche current see fig.12a, 12b, 15, 16 a e ar repetitive avalanche energy mj t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 screw 10 lbfin (1.1nm) hexfet ? power mosfet specifically designed for automotive applications, this hexfet ? power mosfet utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features to this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. s d g absolute maximum ratings v dss = 40v r ds(on) = 3.6m ? i d = 170a description www.irf.com 1 o advanced process technology o ultra low on-resistance o dynamic dv/dt rating o 175c operating temperature o fast switching o repetitive avalanche allowed up to tjmax features typical applications o electric power steering o 14 volts automotive electrical systems o lead-free automotive mosfet thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.75 r ja junction-to-ambient ??? 40 irf2204spbf IRF2204LPBF d 2 pak irf2204s to-262 irf2204l c/w
irf2204s/lpbf 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.041 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 3.0 3.6 m ? v gs = 10v, i d = 130a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = 10v, i d = 250a g fs forward transconductance 120 ??? ??? s v ds = 10v, i d = 130a ??? ??? 20 a v ds = 40v, v gs = 0v ??? ??? 250 v ds = 32v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 200 v gs = 20v gate-to-source reverse leakage ??? ??? -200 na v gs = -20v q g total gate charge ??? 130 200 i d = 130a q gs gate-to-source charge ??? 35 52 nc v ds = 32v q gd gate-to-drain ("miller") charge ??? 39 59 v gs = 10v t d(on) turn-on delay time ??? 15 ??? v dd = 20v t r rise time ??? 140 ??? i d = 130a t d(off) turn-off delay time ??? 62 ??? r g = 2.5 ? t f fall time ??? 110 ??? v gs = 10v between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 5890 ??? v gs = 0v c oss output capacitance ??? 1570 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 130 ??? ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 8000 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 1370 ??? v gs = 0v, v ds = 32v, ? = 1.0mhz c oss eff. effective output capacitance ??? 2380 ??? v gs = 0v, v ds = 0v to 32v nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns i dss drain-to-source leakage current s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 130a, v gs = 0v t rr reverse recovery time ??? 68 100 ns t j = 25c, i f = 130a q rr reverse recoverycharge ??? 120 180 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 170 850

irf2204s/lpbf www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 210a 1 10 100 1000 10000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 10000 0.1 1 10 10 0 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 4.0 5.0 6.0 7.0 8.0 9.0 10. 0 v gs , gate-to-source voltage (v) 10.00 100.00 1000.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 25v 20s pulse width
irf2204s/lpbf 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 30 60 90 120 150 0 2 4 6 8 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 130a v = 20v ds v = 32v ds 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 175 c j t = 25 c j 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
irf2204s/lpbf www.irf.com 5 fig 9. maximum drain current vs. case temperature v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f
1 0.1 % + - 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 t , case temperature ( c) i , drain current (a) c d limited by package fig 10a. switching time test circuit fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irf2204s/lpbf 6 www.irf.com q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -
fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 150 300 450 600 750 900 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 52a 91a 130a fig 14. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a
irf2204s/lpbf www.irf.com 7 fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 210a
irf2204s/lpbf 8 www.irf.com
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? ! "# $""%$#""# ? %&' ? () ? %&%*+ $ #,- #)", ,)!$. /,%+"% " "# for n-channel hexfet ? power mosfets
irf2204s/lpbf www.irf.com 9

dimensions are shown in millimeters (inches) note: "p" in ass embly line pos i ti on i ndi cates "l ead- f r ee" f 530s t his is an irf 530s wit h lot code 8024 as s e mble d on ww 02, 2000 in the assembly line "l" assembly lot code international rectifier logo part numbe r dat e code year 0 = 2000 we e k 02 line l f530s a = assembly site code week 02 p = de signat e s lead-f ree product (optional) rectifier international logo lot code as s e mb l y ye ar 0 = 2000 dat e code part number
irf2204s/lpbf 10 www.irf.com to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) as s e mb l y lot code rectifier int ernat ional as s e mb l e d on ww 19, 1997 note: "p" in assembly line pos ition indicates "l ead-f ree" in t he as s e mb l y line "c" logo t his is an irl3103l lot code 1789 example: line c date code we e k 19 ye ar 7 = 1997 part number part number logo lot code as s e mb l y international re ct if ier product (optional) p = designates lead-free a = assembly site code we e k 19 ye ar 7 = 1997 dat e code or
irf2204s/lpbf www.irf.com 11 repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). starting t j = 25c, l = 0.06mh r g = 25 ? , i as = 130a. (see figure 12). i sd 130a, di/dt 170a/s, v dd v (br)dss , t j 175c. pulse width 400s; duty cycle 2%.
c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/04

dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

▲Up To Search▲

Price & Availability of IRF2204LPBF

	To Download IRF2204LPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .